In our ongoing ‘On the Fringe’ series, some of TI’s brightest minds discuss today’s biggest technological trends and solving the challenges of tomorrow.
Gallium nitride (GaN) enables new power supply applications to operate at much higher switching frequencies than previously used silicon transistors at the same voltage. This means greater efficiency than could be achieved with silicon-based solutions under the same conditions. With the introduction of a fully integrated prototype we announced today – the LMG5200– we are making it easy for engineers to design GaN into power solutions and push the limits of conventional power density expectations. Building on decades of expertise in power testing, we have done more than a million hours of accelerated testing on GaN and have built the ecosystem to enable GaN-based power designs.
GaN will find its home in power-dense places. So, it will make power supplies smaller while maintaining or improving the efficiency. It is being designed into electronic power supplies that convert electricity between alternating and direct current forms, change voltage levels, and perform a number of functions to ensure the availability of clean electrical power. For some products, it’s about performance. It just depends on the application.
This technology can impact anything you plug into a wall – personal computer adaptors, audio/video receivers, and digital TVs. Wall adapters take up significant space and are unsightly, and they also dissipate a non-trivial amount of power in the form of heat. GaN provides a significant opportunity both to shrink these and lower electric bills.
In audio applications, performance is impacted by electrical noise unintentionally injected into the audio signal. The lower capacitance of GaN can help minimize noise by minimizing parasitic ringing and optimizing switching times to minimize distortion.
In data centers and servers, GaN reduces the losses in the power supplies used to power the cloud. In addition, the ability to shrink the power solution will free up space for more processors, memory, or storage.
This is a similar concern for our customers focusing on telecommunication power supplies for network switching devices. Already there is industry momentum to investigate new, higher voltage architectures to reduce distribution losses and leverage GaN to convert in one step to lower voltages, which was previously inefficient with similar silicon solutions. For example, in base stations, you could reduce power loss by maintaining the standard 48 volts and directly convert this voltage to the level needed by the digital circuits. Today’s common architectures reduce the power from 48 volts to 12 volts and then to the lower voltage needed by the digital circuits. Now you can use fewer converters, thus reducing power loss.
Within the next few years, GaN could reduce adapter sizes while providing greater output power. The benefit will be having a wall adapter that is convenient to carry around while supporting higher capacity batteries that can be used for longer run time and bigger/better displays.
Customers will be able to use our products for a variety of automotive, industrial and wireless charging products, and it will give them much better performance. We are also engaging with military and space customers on wide temperature and radiation applications.
We can also develop new types of converters, motor drives and systems.
The LMG5200 difference
The LMG5200 prototype consists of a high-frequency driver and two GaN FETs in a half-bridge configuration – all in an easy-to-use QFN package – and allows power designers to quickly realize the true benefits of this material.
To give GaN the market it deserves, we had to make it easier for our customers to use and optimize the performance. We knew we had to do something different. By co-packaging the GaN FETs next to a high-performance driver, we were able to provide incredible performance in one module.
We also wanted to make the GaN device more intelligent. We’ve always strived to make devices smarter to reduce the complexity of a solution allowing our customers to focus on areas where they add the most value. To this end, we made the LMG5200 to reduce the effort needed to add GaN and its benefits to a power solution.
The sky is the limit with this technology, which will help customers find creative ways to get more efficient, and force us all to think about things differently. We have the right mix of system components and industry expertise to succeed in this area, and we’re accelerating the adoption of GaN in power applications with the right packaging, performance and proof of reliability, giving it the market it deserves.
Related links:
- Advancing power supply solutions through the promise of GaN
-Learn more about the industry's first 80-V half-bridge GaN FET module